AlGaAs/InGaAs/GaAs heterostructures for pHEMT switching transistors

Characterizing the Switching Thresholds of Magnetophoretic Transistors.

The switching thresholds of magnetophoretic transistors for sorting cells in microfluidic environments are characterized. The transistor operating conditions require short 20-30 mA pulses of electrical current. By demonstrating both attractive and repulsive transistor modes, a single transistor architecture is used to implement the full write cycle for importing and exporting single cells in sp...

Fast-switching all-printed organic electrochemical transistors

Symmetric and fast (~ 5 ms) on-to-off and off-to-on drain current switching characteristics have been obtained in screen printed organic electrochemical transistors (OECT) including PEDOT:PSS (poly(3,4-ethylenedioxythiophene) doped with poly(styrene sulfonic acid)) as the active transistor channel material. Improvement of the drain current switching characteristics is made possible by including...

GaN transistors on Si for switching and high-frequency applications

Conformational Transitions of Polymer Brushes for Reversibly Switching Graphene Transistors

We developed a facile, but efficient, approach to graphene field-effect transistors (FET) functionalized with polymer brushes, in which the conductance can be reversibly switched by solvent-induced polymer conformational changes. Our experimental and stimulation results demonstrated that the solvent-induced conformational transition of the polymer brush could affect the carrier concentration by...

Chemical insight into electroforming of resistive switching manganite heterostructures.

We have investigated the role of the electroforming process in the establishment of resistive switching behaviour for Pt/Ti/Pr0.5Ca0.5MnO3/SrRuO3 layered heterostructures (Pt/Ti/PCMO/SRO) acting as non-volatile Resistance Random Access Memories (RRAMs). Electron spectroscopy measurements demonstrate that the higher resistance state resulting from electroforming of as-prepared devices is strictl...